Chinese Physics B, Volume. 29, Issue 9, (2020)
A synaptic transistor with NdNiO3
Fig. 1. The structure and property of electrolyte gated NdNiO3 transistor. (a) The crystal structure of NdNiO3 film grown on LaAlO3 substrate. (b) The
Fig. 2. The dependence of the channel current on the gate spikes. (a) The same spike time (0.4 s) with different spike voltages. (b) The source–drain current
Fig. 3. The conductance modulation of NdNiO3 transistor. (a) The channel conductance changes with pulse groups. Firstly, the positive gate voltage +1.8 V with pulse width 200 ms was applied, and the pulse number is 5, 10, 15, 20, respectively. Then, the negative gate voltage −1.6 V sequence was applied, and the pulse number is 20, 15, 10, 5, respectively. All the pulse groups were spaced about 180 s. (b) Repeatability of long-term synaptic potentiation and depression.
Fig. 4. STDP characteristics of NdNiO3 transistor device. The applied pre- and post-spikes for the (a) asymmetric and (b) symmetric STDP functions. (c) Asymmetric and (d) symmetric STDP implemented in the NdNiO3 electrolyte-gated synaptic transistors.
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Xiang Wang, Chen Ge, Ge Li, Er-Jia Guo, Meng He, Can Wang, Guo-Zhen Yang, Kui-Juan Jin. A synaptic transistor with NdNiO3[J]. Chinese Physics B, 2020, 29(9):
Received: May. 9, 2020
Accepted: --
Published Online: Apr. 29, 2021
The Author Email: Ge Chen (kjjin@iphy.ac.cn)