Chinese Physics B, Volume. 29, Issue 9, (2020)
A synaptic transistor with NdNiO3
Recently, neuromorphic devices for artificial intelligence applications have attracted much attention. In this work, a three-terminal electrolyte-gated synaptic transistor based on NdNiO3 epitaxial films, a typical correlated electron material, is presented. The voltage-controlled metal–insulator transition was achieved by inserting and extracting H+ ions in the NdNiO3 channel through electrolyte gating. The non-volatile conductance change reached 104 under a 2 V gate voltage. By manipulating the amount of inserted protons, the three-terminal NdNiO3 artificial synapse imitated important synaptic functions, such as synaptic plasticity and spike-timing-dependent plasticity. These results show that the correlated material NdNiO3 has great potential for applications in neuromorphic devices.
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Xiang Wang, Chen Ge, Ge Li, Er-Jia Guo, Meng He, Can Wang, Guo-Zhen Yang, Kui-Juan Jin. A synaptic transistor with NdNiO3[J]. Chinese Physics B, 2020, 29(9):
Received: May. 9, 2020
Accepted: --
Published Online: Apr. 29, 2021
The Author Email: Ge Chen (kjjin@iphy.ac.cn)