The laser cleaning of Al₂O₃ particles which are the main component of the silicon wafer lap-polishing solution commonly used in industry nowadays was studied by experiments combined with theoretical analysis.The simple heat-conduction model was built and the temperature field on silicon wafer surface during laser cleaning was simulated using the finite element method.The adhesion force between the particle and the substrate and cleaning force acting on the particles were calculated,and the theoretical threshold of laser cleaning 1 μm Al₂O₃ is 60mJ·cm².Under the guidance of the mechanism analysis,a serial of laser dry cleaning experiments were carried out to study the dependence of laser cleaning efficiency on laser fluence,numbers of pulse,and laser beam incidence angle on silicon wafer surface using 248 nm,30 ns,KrF excimer laser,Which confirmed the clean model as well as the effect of the field enhancement on laser cleaning.