Photonics Research, Volume. 5, Issue 2, 124(2017)

Electrical nonlinearity in silicon modulators based on reversed PN junctions

Sheng Yu1 and Tao Chu1,2、*
Author Affiliations
  • 1State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
  • 2College of Information Science and Electronic Engineering, Zhejiang University, #38, Zheda Road, Hangzhou 310027, China
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    References(19)

    [8] T. Chu, X. Xiao, H. Xu, X. Li, Z. Li, J. Yu, Y. Yu. High-speed silicon modulators. 39th European Conference and Exhibition on Optical Communication (ECOC), 1-3(2013).

    [17] J. C. Pedro, N. B. Carvalho. Intermodulation Distortion in Microwave and Wireless Circuits(2002).

    [18] S. L. Chuang. Physics of Optoelectronic Devices(1995).

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    Sheng Yu, Tao Chu. Electrical nonlinearity in silicon modulators based on reversed PN junctions[J]. Photonics Research, 2017, 5(2): 124

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    Paper Information

    Category: Silicon Photonics

    Received: Oct. 13, 2016

    Accepted: Feb. 13, 2017

    Published Online: Sep. 26, 2018

    The Author Email: Tao Chu (chutao@zju.edu.cn)

    DOI:10.1364/PRJ.5.000124

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