Acta Photonica Sinica, Volume. 48, Issue 12, 1248002(2019)
Optical Response Analysis of Tapered Coupled Ridge Waveguide Transistor Detector
Figures & Tables(6)
Fig. 2. GCR UTC-HPT光波导的TE模场分布TE mode field distribution of GCR UTC-HPT waveguide
Fig. 3. GCR UTC-HPT光波导的TM模场分布TM mode field distribution of GCR UTC-HPT waveguide
Fig. 4. GCR UTC-HPT的光功率分布Optical power distribution of GCR UTC-HPT
Table 1. Epitaxial-layer parameters of the GCR UTC-HPT
View tableView in ArticleTable 1. Epitaxial-layer parameters of the GCR UTC-HPT
Layer Material Doping/cm-3 Thickness/nm Band gap/eV Ohmic contact layer n+:InGaAs 1019 100 0.75 Overlayer n+:InP 1019 1 800 1.35 Emitter region n:InP 1017 50 1.35 Base region p+:InGaAsP 1018 100 0.80 Transition layer 1 p-:InGaAsP 1015 10 0.80 Transition layer 2 n-:InGaAsP 1015 10 0.88 Collector region n-:InGaAsP 1016 400 1.12 Subcollector region n+:InGaAsP 1019 1 000 1.12 Buffer layer n+:InP 1019 500 1.35 Substrate n+:InP IS.I 2 500 1.35
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Hong-yun XIE, Min GUO, Jia-jun MA, Jie GAO, Liang CHEN, Pei MA, Xian-cheng LIU, Wan-rong ZHANG. Optical Response Analysis of Tapered Coupled Ridge Waveguide Transistor Detector[J]. Acta Photonica Sinica, 2019, 48(12): 1248002
Paper Information
Received: Jun. 12, 2019
Accepted: Aug. 30, 2019
Published Online: Mar. 17, 2020
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