Laser is the ideal electro-optic direct converter, so prolonging the life of the semiconductor laser and improving the reliability of the laser are always the research focuses of high power semiconductor laser. Two methods such as temperature stress acceleration and current stepping stress are used to perform the aging experiment of 808 nm high power semiconductor laser, and the life of the devices are 1 682 h and 1 498 h respectively, the same experiment result is obtained. Observation of the device after destructive aging tests using a microscope, failure reasons are analyzed and obtained, which are due to the surface degradation, solder degradation and bad ohmic contact.