Chinese Optics Letters, Volume. 14, Issue 1, 013101(2016)

Near-infrared lateral photovoltaic effect of epitaxial LaTiO3+δ films under high pressure

Jianfeng Xi1,2, Kun Zhao2、*, Hao Ni2, Wenfeng Xiang2, and Lizhi Xiao1
Author Affiliations
  • 1State Key Laboratory of Petroleum Resources and Prospecting, China University of Petroleum, Beijing 102249, China
  • 2Beijing Key Laboratory of Optical Detection Technology for Oil and Gas, China University of Petroleum, Beijing 102249, China
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    Figures & Tables(5)
    (a) Typical I-V characteristics of the LTO/STO at room temperature. The insets show the schematic measurement setup. (b) XRD pattern of LTO/STO sample.
    (a) Typical waveforms recorded by oscilloscope with 1 MΩ input impedance without any bias when laser spot irradiated the region from position 1.5 mm to position −1.5 mm. (b) Steady waveforms’ peak voltages depended linearly on the spot positions.
    (a) Typical waveforms with different on-sample laser power from 7.8 to 131 mW at position of 1.5 mm. (b) LPV dependence on the on-sample laser power.
    (a) Typical waveforms with bias currents applied from 0 to 350 μA at the position of 1.5 mm. (b) Laser-induced photovoltage dependence on the bias current.
    (a) Laser-induced photovoltages under different pressures with a 1 mA bias current. (b) Laser-induced photovoltages under different pressures with a 3 mA bias current.
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    Jianfeng Xi, Kun Zhao, Hao Ni, Wenfeng Xiang, Lizhi Xiao. Near-infrared lateral photovoltaic effect of epitaxial LaTiO3+δ films under high pressure[J]. Chinese Optics Letters, 2016, 14(1): 013101

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    Paper Information

    Category: Thin films

    Received: Jul. 12, 2015

    Accepted: Nov. 19, 2015

    Published Online: Aug. 6, 2018

    The Author Email: Kun Zhao (zhk@cup.edu.cn)

    DOI:10.3788/COL201614.013101

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