Journal of Inorganic Materials, Volume. 37, Issue 7, 795(2022)
Figures & Tables(20)
1. Characterization of MoTe2 film and electrical measurement of Au/Ti/MoTe2/Au/Ti device
(a) Photo of the centimeter-scale MoTe2 film; (b) Raman spectrum of the MoTe2 film; (c) Optical image of the prepared memristive devices with the structure of Au/Ti/MoTe2/Au/Ti; (d) Optical image of a 3×3 memristor array
2. Stable bipolar resistive switching behavior and retention characteristics of the MoTe2 device
(a) 20 cycles of I-V curves with a compliance current of 3 mA; (b) Retention characteristics of the HRS and the LRS read at 0.1 V
3. Fast switching and good endurance of the MoTe2 device
(a) SET speed under the pulse with the amplitude 1.3 V; (b) RESET speed of the MoTe2 device under the pulse with the amplitude of -1.0 V; (c) Over 2000 switching cycles obtained by applying SET pulse of 1.7 V/700 ns and RESET pulse of -1.2 V/7 μs
Colorful figures are available on website
4. Cumulative distribution of (a) V SET and (b) V RESET of 24 devices
5. Stable resistive switching of the MoTe2 array device after electroforming process
(a) Electroforming process of the MoTe2 array device; (b) 20 cycles I-V curves of the MoTe2 array device with a compliance current of 5 Ma
6. Potentiation and depression processes of the present deviceCircles are experimental results, red lines are fitting results with a phenomenological model
$G=a+c{{e}^{-\beta N}}$
7. Recognition accuracy for small and large handwritten digit images with experimental devices and ideal numericColorful figures are available on website
8. Mechanism analysis of the memristive behavior in the MoTe2 device
(a) I-V characteristics at HRS under different temperatures, with current increasing as the temperature increases Fitted data using the Schottky emission model for HRS is shown in the inset; (b) I-V characteristics at LRS at different temperatures, with current decreasing as the temperature increase, indicating a metallic characteristic
S4. AFM image (a) of 3×3 memristor array, and the height profile (b) along the horizontal line and the vertical line
S6. I-V curves of 24 Au/Ti/MoTe2/Au/Ti devices
All devices show stable resistive switching with low cycle-to-cycle and device-to-device variability
S7. Cumulative distribution of device (a) HRS and (b) LRS of 24 devices
S8. Estimation of the array size for the prepared CVD-MoTe2 device
(a) Sneak current path at read in a square crossbar array where all bits except the selected one are at LRS, and the equivalent circuit can be represented by three resistors (region 1, region 2 and region 3); (b) Dependence of the read margin on the crossbar line number for both 1R and 1T1R schemes
S11. Long-term potentiation and depression of the device using 50 potentiation (1 V, 500 ns) and depression (-1 V, 5 µs) presynaptic pulses
Table 1.
Key resistance values and the corresponding maximum number of word lines/bit lines (N) with read margin >10%
View tableView in ArticleTable 1.
Key resistance values and the corresponding maximum number of word lines/bit lines (N) with read margin >10%
Scheme $R_{\text{LRS}}^{\text{select}}$ $R_{\text{HRS}}^{\text{select}}$ $R_{\text{LRS}}^{\text{sneak}}$ N 1R 150 1500 150 4 1S1R 350 1700 1.25×105 870
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Huikai HE, Rui YANG, Jian XIA, Tingze WANG, Dequan DONG, Xiangshui MIAO.
Paper Information
Category: RESEARCH LETTER
Received: Oct. 25, 2021
Accepted: --
Published Online: Jan. 10, 2023
The Author Email: YANG Rui (yangrui@hust.edu.cn)
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