Fig. 1. Schematic plot of intrinsic modulation response with increasing photon densities.

Fig. 2. (a) Electrical parasitic elements inside a VCSEL. (b) Low pass filter induced by the RC components.

Fig. 3. Simulated frequency responses of the 850-nm VCSEL with (a) single- and (b) double-confined oxide layers.

Fig. 4. TEM image of the VCSEL with double-confined oxide layers.

Fig. 5. Optical spectra of the VSCELs with (a) 6-μm and (b) 10-μm oxide confined apertures.

Fig. 6. Near field lateral modal distributions of the VSCELs with (a) 6-μm and (b) 10-μm oxide confined apertures under different bias current conditions and (c) Cross-sectional SEM image of the VCSEL.

Fig. 7. Frequency responses of the VSCELs with (a) 6-μm and (b) 10-μm oxide confined apertures under different bias current conditions.

Fig. 8. Optical spectra and frequency responses of the differenttype VCSELs.

Fig. 9. BERs of the SM VCSEL chip carried and data waveform pre-emphasized PAM-4 data at different bandwidths after BtB, 100-m, 200-m, and 300-m OM4 MMF transmissions with the corresponding eye-diagram.

Fig. 10. BER of the 100-m OM4-MM fiber transmitted 16-QAMOFDM data for SM VCSEL under the different receiving powers.

Fig. 11. (a) Subcarrier BER responses of the 16-QAM OFDM data before and after 100-m MMF transmissions. (b) BER responses of the FM VCSEL carried 16-QAM OFDM data with and without pre-leveling under 100-m MMF transmissions under different receiving powers.

Fig. 12. (a) Far-filed pattern with 6 μm aperture. (b) Intensity distribution under 1 A pulse of 2-D arrays.