Chinese Journal of Quantum Electronics, Volume. 21, Issue 1, 48(2004)

Preparation and Properties of MgF2 Thin Film by Pulsed Laser Deposition

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    References(5)

    [2] [2] Atanassov G. Mechanical, optical and structural properties of TiO2 and MgF2 thin films deposited by plasma ion assisted deposition [J]. Thin Solid Films, 1999, 342: 83-92.

    [3] [3] Martinu L, Biederman H, Holland L. Thin films prepared by sputtering MgF2 in an rf planar magnetron [J].Vacuum, 1985, 35(12): 531.

    [4] [4] Joseph M, Tabata H, Kawai T. Ferroelectric behavior of Li-doped ZnO thin films on Si(100) by pulsed laser deposition [J]. Appl. Phys. Lett., 1999, 74: 2534-2536.

    [5] [5] Cho K G, Kumar D, Lee D G. Improved luminescence properties of pulsed laser deposited Eu:Y2O3 thin films on diamond coated silicon substrates [J]. Appl. Phys. Lett., 1997, 71: 3335-3337.

    [6] [6] Shinde S R, Ogale S B, Greene R L. Superconducting MgB2 thin films by pulsed laser deposition [J]. Appl. Phys.Lett., 2001, 79: 227-229.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Preparation and Properties of MgF2 Thin Film by Pulsed Laser Deposition[J]. Chinese Journal of Quantum Electronics, 2004, 21(1): 48

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    Paper Information

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    Received: Mar. 7, 2003

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: (gzwang@ustc.edu.cn)

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