Fig. 1. Diagram of the InGaAs-based IRC structure. The left image shows the IRCs on the InGaAs surface, which were recorded with an AFM.

Fig. 2. Principle of measuring ASE spectra from both ends of the sample under optical injection to obtain the SE spectra of the IRC laser structure.

Fig. 3. ASE spectra of TE and TM polarization modes, which were measured from both ends of the edge-emitting IRC laser sample with an injection carrier density of 4.8×1017cm−3.

Fig. 4. Experimental SE spectra in (a) TE mode and (b) TM mode with an InGaAs/GaAs IRC quantum confined laser structure.

Fig. 5. Hybrid band structure consisting of the first conduction sub-band (C1) and the first valence sub-bands of heavy holes (HH1, black line) and light holes (LH1, blue line) due to the IRC effect in the InxGa1−xAs/GaAs material system.

Fig. 6. Theoretical SE spectra in (a) TE mode and (b) TM mode with different injection carrier densities, where solid lines are the calculated SE curves with a standard In0.17Ga0.83As/GaAs quantum well regardless of the IRC effect, and dash lines are the experimental data from the InGaAs IRC laser sample.