<trans-title xml:lang="en">Interface Layer of Te-based Thermoelectric Device: Abnormal Growth and Interface Stability</trans-title>

3. (a) Thicknesses of the interface reaction layers (IRLs) at the Te_0.985Sb_0.015/Ni_xTe interfaces, and (b) formation Gibbs free energies in molar (Δ_rG_T) of the interface products at the Te_0.985Sb_0.015/Ni_xTe interfaces

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4. Diagram of the growth of the interface reaction layer (IRL) at Te/NiTe_2-_m interface

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5. Microstructures of Te_0.985Sb_0.015/Ni_xTe interfaces after aging at 473 K for 6 and 12 d

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6. Performance of Ni_xTe/Te_0.985Sb_0.015/Ni_xTe (x=0.500, 0.563, 0.667) single-leg devices

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S1. Fracture microstructure and element distribution of sintered Te_0.985Sb_0.015

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S2. Thermoelectric performance of Te_0.985Sb_0.015 in the direction parallel to the sintering pressure

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S3. Electrical performance of Ni_xTe samples

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S4. Microstructures and element distributions of sintered Te_0.985Sb_0.015/Ni_xTe interfaces

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S5. Backscatter SEM image of sintered Te_0.985Sb_0.015/Ni interface

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S6. Performance of Ni_0.5Te/Te_0.985Sb_0.015/Ni_0.5Te single-leg devices under a temperature difference of 180 K (Hot end: 473 K, Cold end: 293 K)

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S7. Aging-time dependent performance of Ni_0.5Te/Te_0.985Sb_0.015/Ni_0.5Te single-leg devices under a temperature difference of 180 K (Hot end: 473 K, Cold end: 293 K)

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Table 1. Total migration of atoms (C_N·l) at Te_0.985Sb_0.015/Ni_xTe interface
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Table 1. Total migration of atoms (C_N·l) at Te_0.985Sb_0.015/Ni_xTe interface
Total migration of atoms x=0.500 x=0.563 x=0.667 x=0.833 x=0.908 Te_0.985Sb_0.015/Ni
C_N·l/(mol·cm^-2) 0 0.1297 0.2134 0.2810 0.3154 0.5653

Table 1. Thermodynamic data. Values of entropy (S_T), enthalpy (H_T), and Gibbs free energy (G_T) at 298.15, 600.00 and 700.00 K, respectively

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Table 1. Thermodynamic data. Values of entropy (S_T), enthalpy (H_T), and Gibbs free energy (G_T) at 298.15, 600.00 and 700.00 K, respectively

Phase lable	Formula inreference	Formulaused here	Temperature/K	S_T/(J·mol^-1·K^-1)	H_T/(kJ·mol^-1)	G_T/(kJ·mol^-1)	Ref.
δ(-NiTe_2-_x,52.2%-66.7%(in atom) Te)	Ni_0.476Te_0.524	Ni_0.908Te	298.15	76.393	-51.908	-74.685	[40]
			600.00	112.729	-36.120	-103.758
			700.00	121.397	-30.494	-115.472
	Ni_0.4Te_0.6	Ni_0.667Te	298.15	66.917	-47.833	-67.785	[40]
			600.00	98.732	-33.987	-93.226
			700.00	106.415	-29.000	-103.491
	Ni_0.333Te_0.667	Ni_0.5Te	298.15	60.135	-43.778	-61.707	[40]
			600.00	88.253	-31.552	-84.504
			700.00	95.001	-27.172	-93.673
Te	Te	Te	298.15	49.497	0.000	-14.757	[41]
			600.00	69.537	8.766	-32.956
			700.00	74.694	12.114	-40.171
Ni	Ni	Ni	298.15	29.874	0.000	-8.907	[41]
			600.00	50.419	9.008	-21.243
			700.00	55.546	12.326	-26.557

Table 2. Molar formation Gibbs free energies (Δ_rG_T) of interface products at 298.15, 600.00 and 700.00 K, respectively

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Table 2. Molar formation Gibbs free energies (Δ_rG_T) of interface products at 298.15, 600.00 and 700.00 K, respectively

Chemical reaction equation	Temperature/K	Δ_rS_T/(J·mol^-1·K^-1)	Δ_rH_T/(kJ·mol^-1)	Δ_rG_T/(kJ·mol^-1)
0.25Te+0.75Ni_0.667Te→Ni_0.5Te	298.15	-2.427	-7.903	-7.180
	600.00	-3.180	-8.253	-6.345
	700.00	-3.484	-8.451	-6.012
0.449Te+0.551Ni_0.908Te→Ni_0.5Te	298.15	-4.182	-15.177	-13.930
	600.00	-5.083	-15.586	-12.536
	700.00	-5.426	-15.809	-12.010
1.5Ni+Te→Ni_1.5Te	298.15	5.692	-57.500	-59.197
	600.00	5.969	-57.318	-60.899
	700.00	8.110	-56.023	-61.700

Table 3. Density (ρ), molar mass (M) and moles of the bound Te per mole substance

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Table 3. Density (ρ), molar mass (M) and moles of the bound Te per mole substance

Item	NiTe₂(Ni_0.5Te)	NiTe_1.776(Ni_0.563Te)	NiTe_1.5(Ni_0.667Te)	NiTe_1.2(Ni_0.833Te)	NiTe_1.1(Ni_0.908Te)	Ni	Te	NiTe_0.667(Ni_1.5Te)
M/(g·mol^-1)	313.893	285.311	250.093	211.813	199.053	58.693	127.600	143.802
n	2.000	1.776	1.500	1.200	1.100	0.000	-	0.667
ρ/(g·cm^-3)	7.701	7.565	7.363	7.086	6.976	8.910	-	8.126

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Xin MIAO, Shiqiang YAN, Jindou WEI, Chao WU, Wenhao FAN, Shaoping CHEN. Interface Layer of Te-based Thermoelectric Device: Abnormal Growth and Interface Stability[J]. Journal of Inorganic Materials, 2024, 39(8): 903

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Paper Information

Category:

Received: Jan. 30, 2024

Accepted: --

Published Online: Dec. 12, 2024

The Author Email: CHEN Shaoping (chenshaoping@tyut.edu.cn)

DOI:10.15541/jim20240057

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Total migration of atoms (CN·l) at Te0.985Sb0.015/NixTe interface

Table 1. Total migration of atoms (CN·l) at Te0.985Sb0.015/NixTe interface

Table 1. Thermodynamic data. Values of entropy (ST), enthalpy (HT), and Gibbs free energy (GT) at 298.15, 600.00 and 700.00 K, respectively

Table 1. Thermodynamic data. Values of entropy (ST), enthalpy (HT), and Gibbs free energy (GT) at 298.15, 600.00 and 700.00 K, respectively

Table 2. Molar formation Gibbs free energies (ΔrGT) of interface products at 298.15, 600.00 and 700.00 K, respectively

Table 2. Molar formation Gibbs free energies (ΔrGT) of interface products at 298.15, 600.00 and 700.00 K, respectively

Table 3. Density (ρ), molar mass (M) and moles of the bound Te per mole substance

Table 3. Density (ρ), molar mass (M) and moles of the bound Te per mole substance

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Table 1. Total migration of atoms (C_N·l) at Te_0.985Sb_0.015/Ni_xTe interface

Table 1. Total migration of atoms (C_N·l) at Te_0.985Sb_0.015/Ni_xTe interface

Table 1. Thermodynamic data. Values of entropy (S_T), enthalpy (H_T), and Gibbs free energy (G_T) at 298.15, 600.00 and 700.00 K, respectively

Table 1. Thermodynamic data. Values of entropy (S_T), enthalpy (H_T), and Gibbs free energy (G_T) at 298.15, 600.00 and 700.00 K, respectively

Table 2. Molar formation Gibbs free energies (Δ_rG_T) of interface products at 298.15, 600.00 and 700.00 K, respectively

Table 2. Molar formation Gibbs free energies (Δ_rG_T) of interface products at 298.15, 600.00 and 700.00 K, respectively