Journal of Inorganic Materials, Volume. 34, Issue 1, 79(2019)

Microfluidic-method-processed p-type NiOx Thin-film Transistors

Yu LIANG1...2, Ling-Yan LIANG1, Wei-Hua WU1, Yu PEI1, Zhi-Qiang YAO2, Hong-Tao CAO1, [in Chinese]1,2, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2 and [in Chinese]1 |Show fewer author(s)
Author Affiliations
  • 11. Key Laboratory of Graphene Technologies and Applications of Zhejiang Province, Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201, China
  • 22. State Centre for International Cooperation on Designer Low-Carbon and Environmental Materials (ICDLCEM), School of Material Science and Engineering, Zhengzhou University, Zhengzhou 450001, China
  • show less
    Figures & Tables(6)
    Illustration of the preparation process of PDMS moulds
    Illustration of the patterning process by capillary method
    Thermogravimetric and differential thermal analysis (TG-DTA) curves of NiO precursor
    XRD patterns of NiO powders
    (a) Optical microscope image of a substrate patterned with NiO stripes with inset showing a close-up view; (b) Height fluctuation across the NiO stripe margin obtained by atomic force microscopy
    Schematic structure of the fabricated TFT device (a), output curves of the TFTs annealed at 300℃ (b) and 350℃ (c), and transfer curves of the corresponding TFTs (d)
    Tools

    Get Citation

    Copy Citation Text

    Yu LIANG, Ling-Yan LIANG, Wei-Hua WU, Yu PEI, Zhi-Qiang YAO, Hong-Tao CAO, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Microfluidic-method-processed p-type NiOx Thin-film Transistors[J]. Journal of Inorganic Materials, 2019, 34(1): 79

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Research Articles

    Received: Apr. 16, 2018

    Accepted: --

    Published Online: Feb. 4, 2021

    The Author Email:

    DOI:10.15541/jim20180167

    Topics