Infrared and Laser Engineering, Volume. 52, Issue 11, 20230198(2023)
650 nm semiconductor laser based on external cavity spectral combination
Fig. 2. Laser characteristics before spectrum combining. (a) Free lasing spectrum before wavelength locking; (b) Optical field distribution before wavelength locking
Fig. 3. Laser characteristics after spectral combination. (a) Laser spectrum after spectral combination; (b) Light field distribution after spectrum combining
Fig. 4. Power curve and E-O conversion efficiency curve of free running and spectral combining
Get Citation
Copy Citation Text
Zhengdong Fan, Hangyu Peng, Jun Zhang, Jingbo Wang, Jiye Zhang, Lijun Wang. 650 nm semiconductor laser based on external cavity spectral combination[J]. Infrared and Laser Engineering, 2023, 52(11): 20230198
Category:
Received: Apr. 3, 2023
Accepted: --
Published Online: Jan. 8, 2024
The Author Email: