High Power Laser and Particle Beams, Volume. 36, Issue 8, 085002(2024)

Design of MOSFET gate driver circuit with negative voltage stability

Yakun Yin1... Zhangchao Duan2, Yonggang Wang1,*, Song Jiang1 and Zi Li1 |Show fewer author(s)
Author Affiliations
  • 1School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 2Panjiakou Energy Storage Power Plant, State Grid Xinyuan Holdings Co., Ltd., Tangshan 064309, China
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    Figures & Tables(11)
    Basic structure of an all-solid-state Marx pulse generator
    On/off control signal and driving circuit working diagram
    Working process of drive circuit
    Experimental platform display
    Full-bridge control module generates multiple off-signal pulses
    Gate drive circuit waveform of power MOSFET
    Rising edge of the discharged MOSFET gate control signal
    No-load pulse output waveform with negative bias 24 kV, 1 kHz, 300 ns
    24 kV, 1 kHz, 300 ns continuous high repetition pulse waveforms
    Pulse width can be continuously adjusted
    Pulse amplitude can be continuously adjusted
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    Yakun Yin, Zhangchao Duan, Yonggang Wang, Song Jiang, Zi Li. Design of MOSFET gate driver circuit with negative voltage stability[J]. High Power Laser and Particle Beams, 2024, 36(8): 085002

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    Paper Information

    Category:

    Received: Feb. 1, 2024

    Accepted: May. 30, 2024

    Published Online: Aug. 8, 2024

    The Author Email: Wang Yonggang (fduwangyg@163.com)

    DOI:10.11884/HPLPB202436.240047

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