High Power Laser and Particle Beams, Volume. 36, Issue 8, 085002(2024)

Design of MOSFET gate driver circuit with negative voltage stability

Yakun Yin1... Zhangchao Duan2, Yonggang Wang1,*, Song Jiang1 and Zi Li1 |Show fewer author(s)
Author Affiliations
  • 1School of Mechanical Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 2Panjiakou Energy Storage Power Plant, State Grid Xinyuan Holdings Co., Ltd., Tangshan 064309, China
  • show less

    A drive circuit for solid-state high-voltage Marx pulser generator is designed, and the output side of the drive circuit adopts energy storage capacitor and P-N-MOS structure, which can complete the synchronization, fast turning on and turnin off control of the power MOSFET in the power circuit of the solid-state pulse generator, and has the functions of dead-time adjustment and negative voltage bias. In addition, the drive circuit is combined with the scheme of reverse wiring on the secondary side of the core-piercing magnetic ring to realize the control of two power MOSFETs of charging and discharging in the power loop using the same signal. Experiments show that the solid-state Marx pulse generator using this drive circuit can output a pulse square wave with a stable amplitude of 24 kV, and the output pulse width can be freely adjusted between 300 ns and 10 μs, and the rising and falling edges are within 40 ns.

    Keywords
    Tools

    Get Citation

    Copy Citation Text

    Yakun Yin, Zhangchao Duan, Yonggang Wang, Song Jiang, Zi Li. Design of MOSFET gate driver circuit with negative voltage stability[J]. High Power Laser and Particle Beams, 2024, 36(8): 085002

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Feb. 1, 2024

    Accepted: May. 30, 2024

    Published Online: Aug. 8, 2024

    The Author Email: Wang Yonggang (fduwangyg@163.com)

    DOI:10.11884/HPLPB202436.240047

    Topics