[1] [1] LI Xiu-yan, ERMAKOV A, AMARASINGHE V, et al. Oxidation induced stress in SiO2/SiC structures［J］. Applied Physics Letters, 2017, 110: 141604.

[2] [2] ZHAO Fei, YANG Wen, MO Jing-hui, et al. Influence of pulse sputtering power on the structural and optical properties of SiCx thin films containing silicon quantum dots［J］. Acta Photonica Sinica, 2017, 46(12): 1231002.

[3] [3] HUANG M. Analytical solutions for thermal stresses in buried channelwaveguides［J］. IEEE Journal of Quantum Electronics, 2004, 40(11): 1562-1568.

[4] [4] CHASON E, KARLSON M, COLIN J, et al. A kinetic model for stress generation in thin films grown from energetic vapor fluxes［J］. Journal of Applied Physics, 2016, 119: 145307.

[5] [5] SUN De-gui, SUN Qing-yu, XING Wen-chao, et al. Investigation for the structural stress of SiO2 thin films and its distribution on the large-wafer created by plasma enhanced chemical vapor deposition［J］. AIP Advances, 2018, 8(8): 085217.

[6] [6] ZHANG Le-tian, WU Yuan-da, XING Hua, et al. Fabrication of Si-based silica waveguide material applied in AWG［J］. Journal of Optoelectonics·Laser, 2012, 13(8): 868-871.

[7] [7] PAN Yong-qiang. Properties of silicon nitride films deposited by radio frequency plasma enhanced chemical vapor deposition［J］. Acta Photonica Sinica, 2007, 36(6): 1097-1101.

[8] [8] SHAO Shu-ying, TIAN Guang-lei, FAN Zheng-xiu, et al. Influences of the deposition parameters and aging time on the residual stress of SiO2 films［J］. Acta Optica Sinica, 2005, 25(1): 126-130.

[9] [9] SHEN Yan-ming, HE Hong-bo, SHAO Shu-ying, et al. Influences of deposition temperature on residual stress of HfO2 films prepared by electron beam evaporation［J］. Chinese Journal of Lasers, 2006, 33(6): 827-831.

[10] [10] LUO Hai-han,CAI Qing-yuan, LI Yao-peng, et al. Study on the optical characteristic of silicon dioxide thin films deposited in different temperatures［J］. Acta Optica Sinica, 2014, 34(s2): s231001.

[11] [11] GUAN D, BRUCCOLERI A, HEILMANN R, et al. Stress control of plasma enhanced chemical vapor deposited silicon oxide film from tetraethoxysilane［J］. Journal of Micromechanics and Microengineering, 2013, 24(2): 027001.

[12] [12] PERALTA L, BERNUSSI A, TEMKIN H, et al. Silicon-dioxide waveguides with low birefringence［J］. IEEE Journal of Quantum Electronics, 2003, 39(7): 874-879.

[13] [13] TUYAERTS R, PONCELET O, RASKIN J, et al. Internal stress and opto-electronic properties of ZnO thin films deposited by reactive sputtering in various oxygen partial pressures［J］. Journal of Applied Physics, 2017, 122: 155306.

[14] [14] ZHOU Li-bin. Silica-on-silicon array waveguides gratings［D］. Wuhan: Huazhong University of Science and Technology of China, 2005: 103-116.

[15] [15] FENG Hang. Study the key process of microphotonic integrated chip［D］. Changchun: Changchun University of Science and Technology of China, 2014: 36-40.

[16] [16] TAMULEVICIUS. Stress and strain in the vacuum deposited thin films［J］. Vacuum, 1998, 51(2): 127-139.