Spectroscopy and Spectral Analysis, Volume. 40, Issue 11, 3394(2020)
Influence of Incident Angle and Polarization on Spectral Behaviors of Tapered Silicon Nanowire
Fig. 1. T-SiNW under irradiation with various incident angles and polarization states
Fig. 2. Impacts of angle and polarization of incident light on the spectral behaviors of T-SiNW
(a): Averaged extinction spectra for pol1 and pol2 light; (b): Extinction spectra for incident light with distinguished polarizations; (c): Averaged absorption spectra for pol1 and pol2 light, and their difference (inset); (d): Averaged Abs./Ext. ratio for pol1 and pol2 light, and their difference (inset)
Fig. 3. Near-field mappings for T-SiNW
(a): Resonance at
Fig. 4. Angular distribution of scattered light by T-SiNW
Scattered light by (a) a fully upright and (b) a fully inverted T-SiNW; a flat-laid T-SiNW under irradiation of (c) pol1 and (d) pol2; T-SiNW under irradiation with (e)
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Jie TONG, Yu-qing LEI, Ying-feng LI, Mei-cheng LI, Ming-hao ZHANG, Zhong-liang GAO. Influence of Incident Angle and Polarization on Spectral Behaviors of Tapered Silicon Nanowire[J]. Spectroscopy and Spectral Analysis, 2020, 40(11): 3394
Category: Research Articles
Received: Oct. 28, 2019
Accepted: --
Published Online: Jun. 18, 2021
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