Optical Instruments, Volume. 42, Issue 5, 12(2020)

Silicon doping impact on magnetotransport in InAs/GaSb type-II superlattices

Zhichao YING1...2, Zhiyong SONG2,3, Aiying CHEN1, Tie LIN2 and Shixiong KANG1,* |Show fewer author(s)
Author Affiliations
  • 1School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China
  • 2National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
  • 3Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai, 200063, China
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    Figures & Tables(5)
    I-V characteristic curves of samples A and B at 12 K
    Mobility and carrier surface density vs. temperature of samples A and B at zero field
    Curves of the magnetoresistance and the rate of change of magnetoresistance of samples A and B as a function of temperature
    Magnetoresistance change rate of sample A and B and the results after fitting the Kawabata model at various temperatures(magnetic field −0.3 T < B <0.3 T)
    Phase coherence length and anisotropy coefficient of samples A and B as a function of temperature
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    Zhichao YING, Zhiyong SONG, Aiying CHEN, Tie LIN, Shixiong KANG. Silicon doping impact on magnetotransport in InAs/GaSb type-II superlattices[J]. Optical Instruments, 2020, 42(5): 12

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    Paper Information

    Category: APPLICATION TECHNOLOGY

    Received: Dec. 28, 2019

    Accepted: --

    Published Online: Jan. 6, 2021

    The Author Email: KANG Shixiong (sky.chris@icloud.com)

    DOI:10.3969/j.issn.1005-5630.2020.05.003

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