Aiming at the characteristics of infrared detector fabrication and improving the physical properties of the materials, the magnetic transport properties of silicon-doped InAs/GaSb type II superlattice films (grown by MOCVD) at temperatures ranging from 12 K to 300 K was researched. The principle of the Hall effect was used to calculate the mobility and carrier concentration of the sample at various temperatures. Electrical measurements were performed using the Vanderberg method. At low temperatures, weak localization (WL) of the thin film is observed, and it is found that the doping of silicon gave it better WL stability. The three-dimensional Kawabata model is used to fit the weak local effects to obtain the value of phase coherence length. It explains the advantage of doped n-type silicon for the quantum localization of InAs/GaSb two types of superlattices, which provides a useful reference for the development of infrared detection devices.