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Acta Physica Sinica, Volume. 69, Issue 9, 098501-1(2020)

Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistor

Fu Chen1,2, Wen-Xin Tang1,2, Guo-Hao Yu2、*, Li Zhang2, Kun Xu2, and Bao-Shun Zhang2、*
Author Affiliations
  • 1School of Nano-Tech and Nano-Bionics, University of Science and Technology of China, Hefei 230026, China
  • 2Key Laboratory of Multifunctional Nanomaterials and Smart Systems, Suzhou Institute of Nano-Tech and Nano-Bionics, Chinese Academy of Sciences, Suzhou 215123, China
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    Fu Chen, Wen-Xin Tang, Guo-Hao Yu, Li Zhang, Kun Xu, Bao-Shun Zhang. Effect of U-shape trench etching process on electrical properties of GaN vertical trench metal-oxide-semiconductor field-effect transistor[J]. Acta Physica Sinica, 2020, 69(9): 098501-1

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    Paper Information

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    Received: Dec. 5, 2019

    Accepted: --

    Published Online: Nov. 26, 2020

    The Author Email: Zhang Bao-Shun (bszhang2006@sinano.ac.cn)

    DOI:10.7498/aps.69.20191850

    Topics

    Nuclear physics
    Particles and fields
    Particle and nuclear astrophysics and cosmology