Van der Waals epitaxial growth and optoelectronics of a vertical MoS<sub>2</sub>/WSe<sub>2</sub> p–n junction

Yu Xiao; Junyu Qu; Ziyu Luo; Ying Chen; Xin Yang; Danliang Zhang; Honglai Li; Biyuan Zheng; Jiali Yi; Rong Wu; Wenxia You; Bo Liu; Shula Chen; Anlian Pan

doi:10.1007/s12200-022-00041-4

Frontiers of Optoelectronics, Volume. 15, Issue 4, 12200(2022)

Van der Waals epitaxial growth and optoelectronics of a vertical MoS₂/WSe₂ p–n junction

Yu Xiao¹, Junyu Qu¹, Ziyu Luo¹, Ying Chen¹, Xin Yang¹, Danliang Zhang², Honglai Li¹, Biyuan Zheng¹, Jiali Yi¹, Rong Wu¹, Wenxia You¹, Bo Liu¹, Shula Chen^1、*, and Anlian Pan¹

Author Affiliations

¹Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha 410082, China

²School of Materials Science and Engineering, Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, Hunan University, Changsha 410082, China

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Yu Xiao, Junyu Qu, Ziyu Luo, Ying Chen, Xin Yang, Danliang Zhang, Honglai Li, Biyuan Zheng, Jiali Yi, Rong Wu, Wenxia You, Bo Liu, Shula Chen, Anlian Pan. Van der Waals epitaxial growth and optoelectronics of a vertical MoS₂/WSe₂ p–n junction[J]. Frontiers of Optoelectronics, 2022, 15(4): 12200

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Paper Information

Category: RESEARCH ARTICLE

Received: Apr. 14, 2022

Accepted: Apr. 21, 2022

Published Online: Jan. 22, 2023

The Author Email: Chen Shula (shuch@hnu.edu.cn)

DOI:10.1007/s12200-022-00041-4

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology