Infrared and Laser Engineering, Volume. 51, Issue 3, 20210226(2022)
Single event latch-up and damage mechanism of analog front-end for satellite-borne polarization camera
Figures & Tables(11)
Fig. 3. single-particle online detection system. (a) Principle block diagram; (b) Photo of AFE in radiation field
Fig. 4. Pulsed laser single event test. (a) Experimental site; (b) The processing flow
Table 1. Ion parameters of heavy ion irradiation test
View tableView in ArticleTable 1. Ion parameters of heavy ion irradiation test
Ion specie Incident angle LET/MeV·cm2·mg−1 Energy/MeV medium range/μm Flux/ion·cm−2·s−1 Experimental environment Ge Vertical 37.3 208 30.3 10900 Vacuum tank Cl Vertical 13.4 150 42.8 13500 Vacuum tank F Vertical 4.4 100 72.7 25400 Vacuum tank
Table 2. AFE test data of heavy ion irradiation
View tableView in ArticleTable 2. AFE test data of heavy ion irradiation
Ion specie LET/ MeV·cm2·mg−1 Flux/ Ion·cm−2·s−1 Working current of the device/mA Limiting current of power supply/mA Dynamic output signal Qualified or not Conclusion Initial 0 0 49 500 Around 4B0H Yes The chip is normal Ge 37.3 10900 371 500 Around FFFFH No SEL occurred After Ge 0 0 49 500 Around 4B0H Yes The chip is not damaged Cl 13.4 13500 297 500 Around FFFFH No SEL occurred After Cl 0 0 49 500 Around 4B0H Yes The chip is not damaged F 4.4 25400 49 500 Around 4B0H Yes The chip is normal After F 0 0 49 500 Around 4B0H Yes The chip is normal
Table 3. Test data of pulsed laser irradiation
View tableView in ArticleTable 3. Test data of pulsed laser irradiation
LET by Laser simulation/ MeV·cm2·mg−1 Number of tests Digital power current/mA Analog power current/mA Internal register communication Image output/DN Conclusion 0 Before test 1 37 Normal 823 Normal 75 First 11 496 Abnormal 16383 SEL occurred Maintain SEL 95 min Laser stop 1 496 Abnormal 16383 SEL occurred Power off and restart After test 1 37 Normal 826 Back to normal 37 Second 11 510 Abnormal 16383 SEL occurred Power off and restart After test 1 37 Normal 826 Back to normal
Table 4. Increased power consumption of optical detector after SEL of the AFE
View tableView in ArticleTable 4. Increased power consumption of optical detector after SEL of the AFE
Item Value Increased power consumption of AFE after SEL/W 1.136 Increased power consumption of LDO after SEL/W 3.234 Increased power consumption of FPGA after SEL/W 0.5 Increased power consumption of DC12V after SEL/W 0.158 Increased power consumption of DC5V after SEL/W 0.301 Increased power consumption of circuit box after SEL/W 5.329 Increased current of primary power supply after SEL/A 0.175 Total current of primary power supply after SEL/A 0.529
Table 5. Calculation results of working temperature after SEL
View tableView in ArticleTable 5. Calculation results of working temperature after SEL
Device Heat consumption after SEL/W Junction-to- case thermal resistance, θJC/℃·W-1 Simulation case temperature/℃ Max junction temperature/℃ Level derating requirement/℃ Accordance AFE 1.38 22 54.2 84.6 ≤85 Yes LDO 3.57 2 43.2 50.4 ≤85 Yes FPGA 0.8 6.3 49.6 54.6 ≤85 Yes
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Pingping Yao, Bihai Tu, Zhengyu Zou, Zhilong Xu, Aiwen Zhang, Liang Sun, Donggen Luo, Jin Hong. Single event latch-up and damage mechanism of analog front-end for satellite-borne polarization camera[J]. Infrared and Laser Engineering, 2022, 51(3): 20210226
Paper Information
Category: Optical devices
Received: Mar. 31, 2021
Accepted: --
Published Online: Apr. 8, 2022
The Author Email: Sun Liang (sunleon@aiofm.ac.cn)
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