Photonics Research, Volume. 10, Issue 1, 33(2022)
Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates
Fig. 1. Schematic cross section of the entire LED structure consisting of Stranski–Krastanov (SK) quantum dots (QDs) grown on photoelectrochemical (PEC) etched QD templates. Both QD layers are capped with AlGaN layers to protect the QDs. The p-GaN contact is formed by Ni evaporation through a shadow mask, and an electrical “flash” process creates the n-contact.
Fig. 2. Atomic force microscope (AFM) images of a PEC QD template at different synthesized steps: (a) PEC QDs after etching, (b) PEC QDs with
Fig. 3. AFM images of SK QDs grown on a PEC QD template and with
Fig. 4. AFM images of SK QDs with an
Fig. 5. STEM images of SK QDs capped with an
Fig. 6. Electroluminescence measurement of the QD LED. (a) Voltage, external quantum efficiency (EQE), and light power versus current of the QD LED. The threshold voltage is
Fig. 7. (a) Simulated peak wavelength and wave function overlap squared of the ground state transitions versus carrier screening for a single
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Xiongliang Wei, Syed Ahmed Al Muyeed, Haotian Xue, Elia Palmese, Renbo Song, Nelson Tansu, Jonathan J. Wierer. Near-infrared electroluminescence of AlGaN capped InGaN quantum dots formed by controlled growth on photoelectrochemical etched quantum dot templates[J]. Photonics Research, 2022, 10(1): 33
Category: Optoelectronics
Received: Aug. 23, 2021
Accepted: Oct. 25, 2021
Published Online: Dec. 9, 2021
The Author Email: Xiongliang Wei (xiw314@lehigh.edu)