[1] [1] SHI J J, QIN L, NING Y Q, et al.. 850 nm vertical cavity surface-emitting laser arrays ［J］. Opt. Precision Eng., 2012, 20(1): 17-23. (in Chinese)

[2] [2] ZHANG X, NING Y Q, ZENG Y G, et al.. Optimization of element structure in 980 nm high-power vertical-cavity surface-emitting laser array ［J］. Opt. Precision Eng., 2011, 19(9): 2014-2021. (in Chinese)

[3] [3] SHI J J, QIN L, LIU D, et al.. High-power vertical cavity surface emitting laser array in series structure ［J］. Opt. Precision Eng., 2011, 19(10): 2309-2313. (in Chinese)

[4] [4] VINCENT L, FRANCOIS J V, SHAILENDRA B, et al.. High power Al free active region (λ= 852 nm) DFB laser diodes for atomic clocks and interferometry applications ［C］. Conference on Lasers and Electro-Optics, California, 2006: 398-405.

[5] [5] KARACHINSKY L Y, NOVIKOV I I, SHERNYAKOV Y M, et al.. High power GaAs/AlGaAs lasers (λ～850 nm) with ultranarrow vertical beam divergence ［J］. Applied Physics Letters, 2006, 89(23): 23114-1-23114-3.

[6] [6] KLEHR A, WENZEL H, BROX O, et al.. High power DFB lasers for D1 and D2 caesium absorption spectroscopy and atomic clocks ［C］. Novel In-Plane Semiconductor Lasers Ⅶ, San Jose, 2008: 69091E-1-69091E-10.

[7] [7] ZORN M, ZETTLER J T, KNALLER A, et al.. In situ determination and control of AlGaInP composition during MOVPE growth ［J］. Journal of Crystal Growth, 2006, 287(2): 637-641.

[8] [8] BUGGE F, ZORN M, ZEIMER V, et al.. MOVPE growth of InGaAs/GaAsP-MQWs for high power laser diodes studied by reflectance anisotropy spectroscopy ［J］. Journal of Crystal Growth, 2009, 311(4): 1065-1069.

[9] [9] YAN CH L, QIN L, NING Y Q, et al.. Calculation of energy band structure of GaInAs/ GaAs quantum well ［J］. Laser Journal, 2004, 25(5): 29-31. (in Chinese)

[10] [10] ZHANG Y, NING Y, ZHANG L, et al.. Design and comparison of GaAs, GaAsP and InGaAlAs quantum-well active regions for 808-nm VCSELs ［J］. Optics Express, 2011, 19(13): 12569-12581.

[11] [11] XU H W, NING Y Q, ZENG Y G, et al.. Temperature Stability of InGaAlAs, InGaAsP, InGaAs and GaAs Quantum-wells for 852nm Laser Diode $$J$$. Chin. J. Lumin, 2012, 33(6): 640-646. (in Chinese)

[12] [12] XU H W, NING Y Q, ZENG Y G, et al.. MOCVD growth of AlGaInAs/AlGaAs QW for 852 nm laser diodes studied by reflectance anisotropy spectroscopy ［J］. Chinese Journal of Lasers, 2012, 39(5): 0502010-1-0502010-6. (in Chinese)