High-melting-point rare earth oxides, due to their advantages of high thermal conductivity, high mechanical strength, low phonon energy, and high cation site density, exhibit characteristics such as large segregation coefficients, strong electron-phonon coupling, and multiple lattice sites. These properties have made them a hot topic of research in high-power, ultrafast, and infrared laser crystals. However, their high-melting-points, particularly for sesquioxides (~2 450 ℃), pose significant challenges for crystal growth. Though being reported decades ago, the development of sesquioxide crystals remains in its early stage. In recent years, breakthroughs in various crystal growth techniques have been achieved, leading to a diversification of rare earth ion-doped laser research. This paper reviews the advantages of high-melting-point rare earth oxides, recent advancements in crystal growth, and the progress in laser performance across the infrared 1, 2 and 3 μm wavelength bands.