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Chinese Optics Letters, Volume. 12, Issue 10, 102702(2014)

High-strain InGaAs/GaAs quantum well grown by MOCVD

Gu Lei1, Li Lin1, Qiao Zhongliang1, Kong Lingyi2, Yuan Huibo1, Liu Yang1, Dai Yin1, Bo Baoxue1, and Liu Guojun1
Author Affiliations
  • 1National Key Lab of High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, Jilin 130022, China
  • 2AIXTRON China Limited, Shanghai 200052, China
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    Gu Lei, Li Lin, Qiao Zhongliang, Kong Lingyi, Yuan Huibo, Liu Yang, Dai Yin, Bo Baoxue, Liu Guojun, "High-strain InGaAs/GaAs quantum well grown by MOCVD," Chin.Opt.Lett. 12, 102702 (2014)

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    Paper Information

    Category: Quantum Optics

    Received: Feb. 26, 2014

    Accepted: Jul. 3, 2014

    Published Online: Sep. 5, 2014

    The Author Email:

    DOI:10.3788/col201412.102702

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology