Acta Photonica Sinica, Volume. 51, Issue 2, 0251209(2022)

High-power GaN-based Blue Laser Diodes with 7.5 W of Light Output Power Under Continuous-wave Operation(Invited)

Lei HU1, Deyao LI1, Jianping LIU1、*, Aiqin TIAN1, Dan WANG1, Tao ZHANG1, Si WU1, Peng XU2, and Hui YANG1
Author Affiliations
  • 1Key Lab of Nanodevices and Applications,Suzhou Institute of Nano-tech and Nano-bionics,Chinese Academy of Sciences,Suzhou,Jiangsu 215123,China
  • 2Guangdong Institute of Semiconductor Micro-nano Manufacturing Technology,Foshan,Guangdong 528000,China
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    References(23)

    [18] Shiwei FENG, Xuesong XIE, Changzhi LU et al. The thermal characterization of packaged semiconductor device(2000).

    [19] D L BLACKBURN. Temperature measurements of semiconductor devices-A review(2004).

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    Lei HU, Deyao LI, Jianping LIU, Aiqin TIAN, Dan WANG, Tao ZHANG, Si WU, Peng XU, Hui YANG. High-power GaN-based Blue Laser Diodes with 7.5 W of Light Output Power Under Continuous-wave Operation(Invited)[J]. Acta Photonica Sinica, 2022, 51(2): 0251209

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    Paper Information

    Category: Special Issue for Ultrafast Optics

    Received: Nov. 2, 2021

    Accepted: Jan. 5, 2022

    Published Online: May. 19, 2022

    The Author Email: LIU Jianping (jpliu2010@sinano.ac.cn)

    DOI:10.3788/gzxb20225102.0251209

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