Infrared and Laser Engineering, Volume. 35, Issue 3, 294(2006)

Growth and defects characterization of HgCdTe film grown by LPE method

[in Chinese]*, [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese]. Growth and defects characterization of HgCdTe film grown by LPE method[J]. Infrared and Laser Engineering, 2006, 35(3): 294

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    Received: Sep. 10, 2005

    Accepted: Nov. 30, 2005

    Published Online: Oct. 20, 2006

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