Acta Optica Sinica, Volume. 29, Issue 1, 252(2009)
Improvement for Extraction Efficiency of Vertical GaN-Based LED on Si Substrate by Photo-Enhanced Wet Etching
The surface of n-GaN is fabricated by photo-enhanced wet etching with the etchant of 0.1 M K2S2O8+KOH and the illumination of Xe ultraviolet light. The n-GaN with an electrode on its surface is etched. Under the same etching condition, n-GaN with an electrode on its surface shows a higher etching rate but a lower root-mean-error(RMS) compared with n-GaN without an electrode. After etching, the surface of n-GaN is covered by hexagonal cones. Output power of the LED is improved by 88.5% after etching with 20 mA current.
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Zhou Yinhua, Tang Yingwen, Rao Jianping, Jiang Fengyi. Improvement for Extraction Efficiency of Vertical GaN-Based LED on Si Substrate by Photo-Enhanced Wet Etching[J]. Acta Optica Sinica, 2009, 29(1): 252