Based on semiconductor manufacturing process, blue light GaN-based Micro-LED chips with a size of 50μm×80μm were prepared. The forward voltage of the chips is about 2.55V. The voltage of ten LED chips under the injection current of 1mA were tested, and the maximum value of 3.24V and minimum value of 3.12V were obtained with a fluctuation amplitude within 4%. At the test current of 1mA, the peak wavelength and FWHM of the EL spectrum of the test chips are 453nm and 14.4nm, respectively. The external quantum efficiency of the chip can reach up to 12.38%, and the chip emits very uniform light and presents a high brightness. The test results show that the prepared Micro-LED chips have excellent photoelectric performance. In addition, Micro-LED chips transfer was achieved through laser lift-off technology, and the influence of laser lift-off process on the photoelectric performance of Micro-LED chips was studied. It is found that the laser lift-off process almost has no effect on the photoelectric performance of the chips under optimized process conditions.