Acta Photonica Sinica, Volume. 31, Issue 1, 93(2002)

X-RAY DIFFRACTION ROCKING CURVE OF AlGaAs/GaAs EPITXIAL LAYER OF TRANSPARENT GaAs PHOTOCATHODE

[in Chinese]... [in Chinese], [in Chinese] and [in Chinese] |Show fewer author(s)
Author Affiliations
  • [in Chinese]
  • show less
    References(7)

    [1] [1] Chu Ryang Wie.High resolution X-ray Diffraction characterization of semiconductor structures.Materials Science and Engineering,1994,R13(1):16~18

    [2] [2] Gilles Renaud.Oxide surface and metal/oxide interfaces studied by grazing incidence X-ray scattering.Surface Science Reports,1998,32:12~13

    [3] [3] Fewster P F.X-ray diffraction from low dimensional structures.Semicond Sci Technol,1993,8:1921~1923

    [4] [4] Shaw R.Image science.London :Academic Press Inc,1974:220~221

    [5] [5] Fewster P F.High-resolution diffraction-space mapping and topography.Appl Phys,1994,A58(1):121~127

    [6] [6] van der Sluis P.Determination of strain in epitaxial semiconductor structures by high-resolution X-ray diffraction.Appl Phys,1994,A58:129~134

    [7] [7] Feng Zhechuan,Liu Hongdu.Generalized formula for curvature radius and lager stresses caused by thermal strain in semiconductor multilager structures.J Appl Phys,1983,54(1):83~85

    Tools

    Get Citation

    Copy Citation Text

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. X-RAY DIFFRACTION ROCKING CURVE OF AlGaAs/GaAs EPITXIAL LAYER OF TRANSPARENT GaAs PHOTOCATHODE[J]. Acta Photonica Sinica, 2002, 31(1): 93

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category: Optoelectronics

    Received: Jul. 5, 2001

    Accepted: --

    Published Online: Sep. 18, 2007

    The Author Email:

    DOI:

    Topics