Fig. 1. In an air-(G-Si)-air structure, reflectance, transmittance and absorptance as a function of incident optical frequency and incident angle for TE mode when chemical potential is different. (a) Reflectance, (b) transmittance and (c) absorptance at 100 meV; (d) reflectance, (e) transmittance and (f) absorptance at 300 meV

Fig. 2. In an air-(G-Si)-air structure, reflectance, transmittance and absorptance as a function of incident optical frequency and incident angle for TM mode when chemical potential is different. (a) Reflectance, (b) transmittance and (c) absorptance at 100 meV; (d) reflectance, (e) transmittance and (f) absorptance at 300 meV

Fig. 3. In an air-(G-Si-G)-air structure, reflectance, transmittance and absorptance as a function of incident optical frequency and incident angle for TE mode when chemical potential is different. (a) Reflectance, (b) transmittance and (c) absorptance at 100 meV; (d) reflectance, (e) transmittance and (f) absorptance at 300 meV

Fig. 4. In an air-(G-Si-G)-air structure, reflectance, transmittance and absorptance as a function of incident optical frequency and incident angle for TM mode when chemical potential is different. (a) Reflectance, (b) transmittance and (c) absorptance at 100 meV; (d) reflectance, (e) transmittance and (f) absorptance at 300 meV

Fig. 5. Phase difference between the first reflected light and the second transmitted-reflected-transmitted light as a function of incident optical frequency at the normal incidence in three dielectric layer structure when chemical potential is different. (a) 100 meV; (b) 300 meV