Infrared and Laser Engineering, Volume. 51, Issue 5, 20220270(2022)

Advances in III-nitride-based microresonator optical frequency combs (Invited)

Changzheng Sun... Yanzhen Zheng, Bing Xiong, Lai Wang, Zhibiao Hao, Jian Wang, Yanjun Han, Hongtao Li and Yi Luo |Show fewer author(s)
Author Affiliations
  • Department of Electronic Engineering, Tsinghua University, Beijing 100084, China
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    Chip-scale optical frequency combs based on microresonators have great potentials in spectroscopy, microwave photonics, optical atomic clocks and coherent optical communications. The non-centrosymmetric wurtzite crystal structure of aluminum nitride (AlN) and gallium nitride (GaN) allows them to exhibit both second- and third-order nonlinear optical coefficients, together with wide transparency window and large refractive index contrast against sapphire substrate, making III-nitrides an attractive platform for nonlinear photonics. The basic properties of AlN and GaN microresonators as well as recent advances in III-nitride-based microresonator frequency combs are presented, including broadband frequency comb generation and optical parametric oscillation in AlN microresonators, and soliton microcomb generation in GaN microresonators.

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    Changzheng Sun, Yanzhen Zheng, Bing Xiong, Lai Wang, Zhibiao Hao, Jian Wang, Yanjun Han, Hongtao Li, Yi Luo. Advances in III-nitride-based microresonator optical frequency combs (Invited)[J]. Infrared and Laser Engineering, 2022, 51(5): 20220270

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    Paper Information

    Category: Special issue—Microcavity optical frequency comb technology

    Received: Mar. 10, 2022

    Accepted: May. 16, 2022

    Published Online: Jun. 14, 2022

    The Author Email:

    DOI:10.3788/IRLA20220270

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