Proton Displacement Damage in 975 nm Quantum Well Laser Diodes

Cuicui Liu; Hongqi Jing; Nan Lin; Gang Guo; Xiaoyu Ma

doi:10.3788/AOS222064

Acta Optica Sinica, Volume. 43, Issue 11, 1127001(2023)

Proton Displacement Damage in 975 nm Quantum Well Laser Diodes

Cuicui Liu¹, Hongqi Jing², Nan Lin^2,3, Gang Guo^1、*, and Xiaoyu Ma^2,3、**

Author Affiliations

¹National Innovation Center of Radiation Application, China Institute of Atomic Energy, Beijing 102413, China

²National Engineering Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

³College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China

show less

Abstract Get PDF(in Chinese)

Figures & Tables(9)

$Band gap structure and refractive index distribution of LD. (a) Whole device; (b) QW local$

Fig. 1. Band gap structure and refractive index distribution of LD. (a) Whole device; (b) QW local

Download full size

Fig. 2. Effect of 10 MeV proton on LD. (a) Source of vacancy defects in LD; (b) types of vacancy defects in epitaxial layers;(c) distribution of vacancy defects in epitaxial layers

Download full size

Fig. 3. Laser spectra of LDs before and after 10 MeV proton injected. (a) 3×10⁸ cm^-2; (b) 3×10⁹ cm^-2; (c) 3×10¹⁰ cm^-2; (d) 1×10¹¹ cm^-2; (e) 3×10¹¹ cm^-2

Download full size

Fig. 4. $P_{o u t}$ - $I$ characteristics of LDs before and after 10 MeV proton injected. (a) 3×10⁸ cm^-2; (b) 3×10⁹ cm^-2; (c) 3×10¹⁰ cm^-2;(d) 1×10¹¹ cm^-2; (e) 3×10¹¹ cm^-2

Download full size

Fig. 5. $V$ - $I$ characteristics of LDs before and after 10 MeV proton injected. (a) 3×10⁸ cm^-2; (b) 3×10⁹ cm^-2; (c) 3×10¹⁰ cm^-2;(d) 1×10¹¹ cm^-2; (e) 3×10¹¹ cm^-2

Download full size

Fig. 6. Band gap structure at QW of LD. (a) Unirradiated; (b) irradiated

Download full size

Fig. 7. Relation between change of external differential quantum efficiency and proton fluence

Download full size

Table 1. Structural parameters of QW LD

View table

Table 1. Structural parameters of QW LD

Epitaxial layer	Material	Thickness /nm
Cap layer	P⁺-GaAs	150
P-cladding layer	P-Al_0.355GaAs	1000
Barrier	Al_0.154GaAs to Al_0.240GaAs	40
Single QW	In_0.160GaAs	7.9
Barrier	Al_0.240GaAs to Al_0.154GaAs	40
Waveguide layer	Al_0.240GaAs	480
N-gradient layer	N-Al_0.295GaAs	480
N-cladding layer	N-Al_0.291GaAs	950
N-transition layer	N-GaAs to N-Al_0.285GaAs	160
Substrate	GaAs buffer	500

Table 2. Proton irradiation experimental parameters
View table
Table 2. Proton irradiation experimental parameters
Sample Energy /MeV Fluence /（cm^-3） DDD /（MeV $∙$ g^-1）
LD 1 10 3×10⁸ 2.37×10⁶
LD 2 10 3×10⁹ 2.37×10⁷
LD 3 10 3×10¹⁰ 2.37×10⁸
LD 4 10 1×10¹¹ 7.91×10⁸
LD 5 10 3×10¹¹ 2.37×10⁹

Tools

Get Citation

Copy Citation Text

Cuicui Liu, Hongqi Jing, Nan Lin, Gang Guo, Xiaoyu Ma. Proton Displacement Damage in 975 nm Quantum Well Laser Diodes[J]. Acta Optica Sinica, 2023, 43(11): 1127001

Download Citation

EndNote(RIS)BibTex Plain Text

Set citation alerts for article

Save article for my favorites