INFRARED, Volume. 43, Issue 4, 1(2022)
Research Progress of Long Wave p-on-n HgCdTe Infrared Focal Plane Devices
[1] [1] Rubaldo L, Taalat R, Berthoz J, et al. Latest Improvements on Long Wave p-on-n HgCdTe Technology at Sofradir[C]. SPIE, 2017, 10177: 101771E.
[2] [2] Castelein P, Baier N, Gravrand O, et al. Latest Developments in the p-on-n HgCdTe Architecture at DEFIR[C]. SPIE, 2014, 9070: 90702Y.
[3] [3] Sze S M. Physics of Semiconductor Devices[J]. Physics Today, 1981, 51(1): 38.
[4] [4] Reine M B. Semiconductors and Semimetals[M]. Cambridge: Academic Press, 1981.
[5] [5] Destéfanis G L. Electrical Doping of HgCdTe by Ion Implantation and Heat Treatment[J]. Journal of Crystal Growth, 1988, 86(1-4): 700-722.
[6] [6] Vuillermet M, Billon-Lanfrey D, Reibel Y, et al. Status of MCT Focal Plane Arrays in France[C]. SPIE, 2012, 8353: 83532K.
[7] [7] Gravrand O, Mollar D L, Boulade O, et al. Ultra Low Dark Current CdHgTe FPAs in the SWIR Range at CEA and Sofradir[J]. Journal of Electronic Materials, 2012, 41(10): 2686-2693.
[8] [8] Baier N, Mollard L, Rothman J, et al. Status of p-on-n HgCdTe Technologies at DEFIR[C]. SPIE, 2009, 7298: 729823.
[9] [9] Hansen G L, Schmit J L, Casselman T N, et al. Energy Gap Versus Alloy Composition and Temperature in Hg1-xCdxTe[J]. Journal of Applied Physics, 1982, 53: 7099-7101.
[10] [10] Mollard L, Destefanis G, Bourgeois G, et al. Status of p-on-n Arsenic-Implanted HgCdTe Technologies[J]. Journal of Electronic Materials, 2011, 40(8): 1830-1839.
[11] [11] Manissadjian A, Tribolet P, Destefanis G, et al. Long Wave HgCdTe Staring Arrays at Sofradir: from 9 m to 13+ m Cut-offs for High Performance Applications[C]. SPIE, 2005, 5783: 231-242.
[12] [12] Tribolet P. HgCdTe Technology in France[J]. Comptes Rendus Physique, 2003, 4(10): 1121-1131.
[13] [13] Tennant W E. Interpreting Mid-wave Infrared MWIR HgCdTe Photodetectors[J]. Progress in Quantum Electronics, 2012, 36(2-3): 273-292.
[14] [14] Gilmore A S, Bangs J, Gerrish A, et al. Advancements in HgCdTe VLWIR Materials[C]. SPIE, 2005, 5783: 223-230.
[15] [15] Hess G T, Sanders T J. HgCdTe Double-layer Heterojunction Detector Device[C]. SPIE, 2000, 4028: 353-364.
[16] [16] Wenus J, Rutkowski J, Rogalski A. Two-Dimensional Analysis of Double-Layer Heterojunction HgCdTe Photodiodes[J]. IEEE Transactions on Electron Devices, 2001, 48(7): 1326 - 1332.
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HAO Fei, ZHAO Shuo, YANG Hai-yan, Hu Yi-lin. Research Progress of Long Wave p-on-n HgCdTe Infrared Focal Plane Devices[J]. INFRARED, 2022, 43(4): 1
Received: Oct. 25, 2021
Accepted: --
Published Online: Jul. 23, 2022
The Author Email: Fei HAO (haofei20008@163.com)