INFRARED, Volume. 43, Issue 4, 1(2022)
Research Progress of Long Wave p-on-n HgCdTe Infrared Focal Plane Devices
Compared with n-on-p materials, p-on-n materials have lower dark current and higher operating temperature, and are more suitable for long wave and high temperature HgCdTe infrared focal plane devices. The research progress on long wave p-on-n devices by French Sofradir Company, American Raytheon Vision Systems Company, North China Research Institute of Electro-Optics and Kunming Institute of Physics is introduced.
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HAO Fei, ZHAO Shuo, YANG Hai-yan, Hu Yi-lin. Research Progress of Long Wave p-on-n HgCdTe Infrared Focal Plane Devices[J]. INFRARED, 2022, 43(4): 1
Received: Oct. 25, 2021
Accepted: --
Published Online: Jul. 23, 2022
The Author Email: Fei HAO (haofei20008@163.com)