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Infrared and Laser Engineering, Volume. 50, Issue 1, 20211020(2021)

Recent progress of GaN based quantum well infrared photodetector (Invited)

Feng Wu1,*... Jiangnan Dai1, Changqing Chen1, Jintong Xu2 and Weida Hu2 |Show fewer author(s)
Author Affiliations
  • 1Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China
  • 2Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China
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    [10] B F Levine, K K Choi, C G Bethea. New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices. Applied Physics Letters, 50, 1092-1094(1987).

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    Feng Wu, Jiangnan Dai, Changqing Chen, Jintong Xu, Weida Hu. Recent progress of GaN based quantum well infrared photodetector (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211020

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    Paper Information

    Category: Frontier technology of infrared photodetector $ Materials and devices for low-dimensional infrared detection

    Received: Nov. 15, 2020

    Accepted: --

    Published Online: Mar. 24, 2021

    The Author Email:

    DOI:10.3788/IRLA20211020

    Topics

    laser devices and laser physics
    Lasers and Laser Optics
    Laser physics
    laser manufacturing
    Instrumentation, Measurement and Metrology