Infrared and Laser Engineering, Volume. 53, Issue 11, 20240223(2024)
Quantum dot lasers on silicon substrates through evanescent coupling
Fig. 1. (a) 3D structure view; (b) Cross-section view; (c) Schematic of waveguide layer structure
Fig. 2. Relationship between waveguide width and effective refractive index
Fig. 3. Electric field diagrams of three modes in 0.7 μm waveguides
Fig. 4. (a) Relationship between tapered coupler length and coupling efficiency in TE00 mode; (b) Relationship between tapered coupler length and coupling efficiency in TE01 mode; (c) Relationship between length of tapered structure and coupling efficiency before and after maximum efficiency; (d) Relationship between the length of the conical structure used to shrink the spot shape and the coupling efficiency
Fig. 5. Coupling efficiency of tapered structures at 1.26-1.35 μm wavelength
Fig. 7. (a) Relationship between etch depth and reflectivity; (b) Reflectivity spectra of different duty cycles; (c) Relationship between grating length and reflectivity
Fig. 8. Reflectivity of Bragg grating lengths at 110 μm and 240 μm
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Mingyue XIAO, Xiwen HE, Chen ZHOU, Deyue MA, Ruxin LI, Zhiping ZHOU. Quantum dot lasers on silicon substrates through evanescent coupling[J]. Infrared and Laser Engineering, 2024, 53(11): 20240223
Category: 激光器与激光光学
Received: Jul. 28, 2024
Accepted: --
Published Online: Dec. 13, 2024
The Author Email: ZHOU Zhiping (zjzhou@pku.edu.cn)