Chinese Journal of Quantum Electronics, Volume. 22, Issue 2, 251(2005)

Study on Schottky barrier of 4H-SiC at different anealing temperature

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on Schottky barrier of 4H-SiC at different anealing temperature[J]. Chinese Journal of Quantum Electronics, 2005, 22(2): 251

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    Paper Information

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    Received: Jun. 7, 2004

    Accepted: --

    Published Online: May. 15, 2006

    The Author Email: (zhywu@xmu.edu.cn)

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