Chinese Journal of Quantum Electronics, Volume. 22, Issue 2, 251(2005)
Study on Schottky barrier of 4H-SiC at different anealing temperature
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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on Schottky barrier of 4H-SiC at different anealing temperature[J]. Chinese Journal of Quantum Electronics, 2005, 22(2): 251