Schottky barriers were formed by sputtering the metals on the front side of 4H-SiC(Si face) by magnetron sputtering to study the rectifying characteristics of the contacts between the metals and 4H-SiC. The infections of the annealing under different temperature were also studied. Schottky barrier height (SBH) of metal/4H-SiC was evaluated from I-V measurements. Under a reverse voltage about 100 V, the reverse leaky current is below 0.1 nA. After annealed, the SBH of Cu/, Ni/4H-SiC was increased, but the SBH of Cr/, Ag/4H-SiC contact was decreased. The relationship between the work function of metals and the SBH was presented. The barrier height depends on the metal work function with slopes of 0.1 to 0.2 (except metal Cr).