[1] W Shockley. The theory of p-n junctions in semiconductors and p-n junction transistors. Bell Syst Tech J, 28, 435(1949).

[2] C T Sah, R N Noyce, W Shockley. Carrier generation and recombination in P-N junctions and P-N junction characteristics. Proc IRE, 45, 1228(1957).

[3] I Moeini, M Ahmadpour, A Mosavi et al. Modeling the time-dependent characteristics of perovskite solar cells. Sol Energy, 170, 969(2018).

[4] M R Sabity, G M Ali. Staggered heterojunction Pentacene/ZnO based organic−inorganic flexible photodetector. Results Opt, 11, 100403(2023).

[5] M Houshmand, M H Zandi, N E Gorji. Degradation and device physics modeling of SWCNT/CdTe thin film photovoltaics. Superlattices Microstruct, 88, 365(2015).

[6] I Moeini, M Ahmadpour, N E Gorji. Modeling the instability behavior of thin film devices: Fermi Level pinning. Superlattices Microstruct, 117, 399(2018).

[7] S R Díaz. A generalized theoretical approach for solar cells fill factors by using Shockley diode model and Lambert W-function: A review comparing theory and experimental data. Phys B Condens Matter, 624, 413427(2022).

[8] S M Sze, K K Ng. Physics of semiconductor devices. New Jersey: John Wiley & Sons, 1, 1(2007).

[9] T V Torchynska, G P Polupan, V I Kooshnirenko et al. Mechanism of injection-enhanced defect transformation in LPE GaAs structures. Phys B Condens Matter, 273/274, 1037(1999).

[10] H Manuel, L Iván, A Carlos et al. Improved GaInP/GaAs/GaInAs inverted metamorphic triple-junction solar cells by reduction of Zn diffusion in the top subcell. Sol Energy Mater Sol Cells, 248, 112000(2022).

[11] F I Manyakhin, A B Vattana, L O Mokretsova. Application of the sah-noyce-shockley recombination mechanism to the model of the voltagecurrent relationship of led structures with quantum wells. Light Eng, 31(2020).

[12] N S Grushko, L N Vostretsova, A S Ambrosevich et al. Effect of temperature on luminance-current characteristics of the InGaN light-emitting diode’s structure. Semiconductors, 43, 1356(2009).

[13] H Masui. Diode ideality factor in modern light-emitting diodes. Semicond Sci Technol, 26, 075011(2011).

[14] H Masui, S Nakamura, S P DenBaars. Technique to evaluate the diode ideality factor of light-emitting diodes. Appl Phys Lett, 96, 073509(2010).

[15] W Pengchan, T Phetchakul, A Poyai. The local generation and recombination lifetime based on forward diode characteristics diagnostics. J Cryst Growth, 362, 300(2013).

[16] T de Vrijer, D van Nijen, H Parasramka et al. The fundamental operation mechanisms of nc-SiOX>0 :H based tunnel recombination junctions revealed. Sol Energy Mater Sol Cells, 236, 111501(2022).

[17] S V Bulyarskii, M O Vorob’ev, N S Grushko et al. Deep-level recombination spectroscopy in GaP light-emitting diodes. Semiconductors, 33, 668(1999).

[18] O Özdemir, K Sel. Study of minority carrier injection phenomenon on Schottky and plasma deposited p−n junction diodes. Mater Sci Semicond Process, 12, 175(2009).

[19] F I Manyakhin, L O Mokretsova. The regularity of the decrease in the quantum yield of quantum-wells LEDs at the long-term current flow from the ABC model position. Light Eng, 62(2021).

[20] P Y Yu, M Cardona. Fundamentals of semiconductors: Physics and materials properties, 1, 1(2010).

[21] S Adachi. Handbook on physical properties of semiconductors. New York: Springer, 1, 1(2004).

[22] W Shockley, W T Read. Statistics of the recombinations of holes and electrons. Phys Rev, 87, 835(1952).

[23] V E Kudryashov, S S Mamakin, A N Turkin et al. Luminescence spectra and efficiency of GaN-based quantum-well heterostructure light emitting diodes: Current and voltage dependence. Semiconductors, 35, 827(2001).

[24] F I Manyakhin. Mechanism and behavior of the light flux decrease in light-emitting diodes based on AlGaN/InGaN/GaN structures with quantum wells upon prolonged direct-current flow of various densities. Semiconductors, 52, 359(2018).

[25] F I Manyakhin, L O Mokretsova. Modeling the energy structure of a GaN p−i−n junction. Russ Microelectron, 47, 619(2018).