Fig. 1. TEM image (a), high-resolution morphology (b), and diffraction pattern (c) of GaAs Nanowire

Fig. 2. (a) SEM morphology of GaAs NWs devices with two metal electrode terminals;(b) Typical photoconductance transient change of GaAs NWs

Fig. 3. Decay of the PPC at four representative temperature. [The hollow dots represent experimental data, and the continuous solid lines are the fitting results of the photocurrent attenuation using equation (1) ]

Fig. 4. Carrier dynamics model used to determine the dependence of defect concentration on illumination intensity

Fig. 5. Normalized photoionization cross-section variation with photon energy