Chinese Journal of Quantum Electronics, Volume. 41, Issue 4, 671(2024)

Investigation of deep‑level defects in wurtzite GaAs nanowire

QIAO Xumian, LI Xinhua, GU Maomao, GONG Shulei, GONG Ziyan, WU Chaoke, WU Chao, and ZHAO Leiming
Author Affiliations
  • Key Laboratory of Advanced Electronic Materials and Devices, Anhui Jianzhu University, Hefei 230601, China
  • show less

    Deep-level defects are the main cause of persistent photoconductivity (PPC) effect in wurtzite gallium arsenide nanowires (WZ GaAs NWs). The photoconductivity attenuation curve of WZ GaAs NWs are analyzed using the Gauss distribution based defect composite dynamics equation, and an average carrier capture barrier of 60.2 meV is obtained. By analyzing the transient behavior of photoconductivity under illumination, a defect photoionization model is proposed to extract the characteristics of specific defect energy levels. Through fitting the photoionization spectrum of WZ GaAs NWs, a photoionization energy of 0.69 eV is obtained. The large energy difference between the photoionization energy and the thermal capture energy implies that there is a strong coupling between the defect and the lattice for WZ GaAs NWs, which is similar to the behavior of EL2 center in zinc-blende GaAs.

    Keywords
    Tools

    Get Citation

    Copy Citation Text

    Xumian QIAO, Xinhua LI, Maomao GU, Shulei GONG, Ziyan GONG, Chaoke WU, Chao WU, Leiming ZHAO. Investigation of deep‑level defects in wurtzite GaAs nanowire[J]. Chinese Journal of Quantum Electronics, 2024, 41(4): 671

    Download Citation

    EndNote(RIS)BibTexPlain Text
    Save article for my favorites
    Paper Information

    Category:

    Received: Mar. 30, 2023

    Accepted: --

    Published Online: Jan. 8, 2025

    The Author Email:

    DOI:10.3969/j.issn.1007-5461.2024.04.011

    Topics