Fig. 1. Schematic crystal structure of 4H-SiC.4H-SiC晶体结构示意图

Fig. 2. (a) The calculation model of neighbors; (b) top view of medial layer.(a)邻位关系计算模型; (b)中间层俯视图

Fig. 3. The evolution of stepped morphology on 4H-SiC (0001) surface with miscut toward direction: (a) Initial stage; (b) formation of two-bilayer-height AB (blue) steps and CB (light blue); (c) bunching of four bilayers. 4H-SiC (0001)面偏向 的台阶形貌演化　(a)初始台阶; (b) AB (蓝)与 BC (浅蓝)聚并台阶的形成; (c) 四层台阶聚并

Fig. 4. The evolution of stepped morphology on 4H-SiC (0001) surface with miscut toward direction: (a) Initial stage; (b) formation of two-bilayer-height CB (light blue) and AB (blue) steps; (c) formation of two-bilayer-height steps with zigzag shapes. 4H-SiC (0001)面偏向 的台阶形貌演化　(a)初始台阶; (b) AB (蓝)与 BC (浅蓝)聚并台阶的形成; (c) 两层台阶形成的聚并扭折台阶

Fig. 5. The difference in bond configurations are shown schematically: (a) Type of S_N step edge; (b) type of S_D step edge; (c) type of S_M step edge. 不同类型台阶键的配置方式　(a)S_N型台阶; (b)S_D型台阶; (c)S_M型台阶

Fig. 6. Schematic top and side view of a vicinal surface during step-flow growth: (a) The events occurring on the surface and energy barriers; (b) side view of a vicinal surface.台阶流动生长中SiC晶体邻晶面示意图　(a)台阶表面事件与能量势垒; (b)台阶侧面

Fig. 7. Step trajectories of the vicinal surface with miscut angles towards direction. 4H-SiC (0001)面偏向 方向台阶轨迹

Fig. 8. Step trajectories of the vicinal surface with miscut angles towards direction. 4H-SiC (0001)面偏向 方向台阶轨迹