INFRARED, Volume. 42, Issue 12, 21(2021)

Research on Reutilization Technology of CdZnTe Substrate

Yuan NIE* and Qian LI
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    References(5)

    [4] [4] Bostrup G. LPE HgCdTe on Sapphire Status and Advancements[J]. Journal of Electronic Materials, 2001, 30(6): 560565.

    [5] [5] Varavin V S. HgCdTe Epilayers on GaAs: Growth and Devices[J]. OptoElectronics Review, 2003, 11(2): 99 111.

    [6] [6] Zanatta J P. Heteroepitaxy of HgCdTe (211)B on Ge Substrates by Molecular Beam Epitaxy for Infrared Detectors[J]. Journal of Electronic Materials, 1998, 27(6): 542545.

    [7] [7] Singh R, Velicu S, Crocco J, et al. Molecular Beam Epitaxy Growth of High-Quality HgCdTe LWIR Layers on Polished and Repolished CdZnTe Substrates[J]. Journal of Electronic Materials, 2005, 34(6): 885810.

    [8] [8] LucTissot J, Marion F. Collective Flip Chip Technology for Hybrid Focal Plane Array[C]. SPIE, 2000, 4310: 581586.

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    NIE Yuan, LI Qian. Research on Reutilization Technology of CdZnTe Substrate[J]. INFRARED, 2021, 42(12): 21

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    Paper Information

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    Received: Aug. 5, 2021

    Accepted: --

    Published Online: Jan. 10, 2022

    The Author Email: Yuan NIE (nieyuan@cetc.com.com)

    DOI:10.3969/j.issn.1672-8785.2021.12.004

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