Research progress of 2 μm Ho single-doped solid laser and application of ZnGeP<sub>2</sub> on middle-long-wave infrared (<i>Invited</i>)

Gaoyou Liu; Disheng Wei; Yi Chen; Ke Yang; Shuyi Mi; Junhui Li; Chao Yang; Ruixue Wang; Xiaoming Duan; Tongyu Dai; Baoquan Yao; Youlun Ju; Yuezhu Wang

doi:10.3788/IRLA20201056

Infrared and Laser Engineering, Volume. 49, Issue 12, 20201056(2020)

Research progress of 2 μm Ho single-doped solid laser and application of ZnGeP₂ on middle-long-wave infrared (Invited)

Gaoyou Liu, Disheng Wei, Yi Chen, Ke Yang, Shuyi Mi, Junhui Li, Chao Yang, Ruixue Wang, Xiaoming Duan, Tongyu Dai, Baoquan Yao^*, Youlun Ju, and Yuezhu Wang

Author Affiliations

National Key Laboratory of Tunable Laser Technology, Harbin Institute of Technology, Harbin 150001, China

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Figures & Tables(8)

Fig. 1. [in Chinese]

Fig. 2. [in Chinese]

Fig. 3. [in Chinese]

Fig. 4. [in Chinese]

Fig. 5. [in Chinese]

Fig. 6. [in Chinese]

Fig. 7. [in Chinese]

Table 1.
Physical properties of some mid/long-wave infrared nonlinear crystals
部分中长波红外非线性晶体的物理特性

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Table 1.
Physical properties of some mid/long-wave infrared nonlinear crystals
部分中长波红外非线性晶体的物理特性

Crystal	Nonlinear coefficient/pm·V⁻¹	Transparency range/µm	Thermal conductivity/W·m⁻¹·K⁻¹	Damage threshold/MW·cm⁻²
ZnGeP₂	d₃₆=75	0.7-12	35	55.6 (1.064 µm, 10 ns)
BaGa₄Se₇	d₁₁=24.3 d₁₃=20.4	0.47-18	0.74∥a 0.64∥b 0.56∥c	557 (1.064 µm, 5 ns)
KTiOPO₄	d₁₅=1.9, d₂₄=3.6 d₃₃=16.9	0.35-4.0	2∥a 3∥b 3.3∥c	500 (1.064 µm, 10 ns)
PPKTP	d₃₃=16.8	0.28-4.5	2∥a 3∥b 3.3∥c	900 (1.064 µm, 5 ns)
KTiOAsO₄	d₁₅=4.2, d₂₄=2.8 d₃₃=16.2	0.35-5.2	1.8∥a 1.9∥b 2.1∥c	>500 (1.064 µm, 10 ns)
LiNbO₃	d₂₂=2.1, d₃₁=4.3, d₃₃=27.2	0.35-4.5	5.6	120 (1.064 µm, 10 ns)
PPLN	d₃₃=27.2	0.33-5.5	5	200 (1.064 µm, 10 ns)
MgO:PPLN	d₁₃=14.8	0.36-5	4.4	600 (1064 nm,9 ns)
AgGaS₂	d₃₆=12.6	0.47-13	1.4∥c 1.5⊥c	34 (1.064 µm, 15 ns)
AgGaSe₂	d₃₆=39.5	0.76-18	1.0∥c 1.1⊥c	13 (2.0 µm, 30 ns)
LiGaS₂	d₃₁=5.8	0.32-11.6	6~8	>240 (1.064 µm, 14 ns)
LiInSe₂	d₃₁=11.78	0.46-14	6.74∥x 8.54⊥z	40 (1.064 µm, 10 ns)
CdSe	d₃₁=18	0.75-25	6.9∥c 6.2⊥c	56 (2.09 µm, 46 ns)
GaSe	d₂₂=54	0.62-20	16.2	30 (1.064 µm, 10 ns)
CdSiP₂	d₃₆=84.5	0.52-9	13.6	41 (1.064 µm, 8 ns)
OP-GaP	d₁₄=70.6	0.5-12	110	>104 (2.09 µm, 12 ns)
OP-GaAs	d₁₄=94	0.86-18	55	>38 (2.09 µm, 50 ns)

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Gaoyou Liu, Disheng Wei, Yi Chen, Ke Yang, Shuyi Mi, Junhui Li, Chao Yang, Ruixue Wang, Xiaoming Duan, Tongyu Dai, Baoquan Yao, Youlun Ju, Yuezhu Wang. Research progress of 2 μm Ho single-doped solid laser and application of ZnGeP₂ on middle-long-wave infrared (Invited)[J]. Infrared and Laser Engineering, 2020, 49(12): 20201056

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Paper Information

Category: Advanced Laser Technology

Received: Sep. 13, 2020

Accepted: --

Published Online: Jan. 14, 2021

The Author Email: Yao Baoquan (yaobq08@hit.edu.cn)

DOI:10.3788/IRLA20201056

Topics

laser devices and laser physics

Lasers and Laser Optics

Laser physics

laser manufacturing

Instrumentation, Measurement and Metrology

Table 1. Physical properties of some mid/long-wave infrared nonlinear crystals部分中长波红外非线性晶体的物理特性

Table 1. Physical properties of some mid/long-wave infrared nonlinear crystals部分中长波红外非线性晶体的物理特性

Table 1.
Physical properties of some mid/long-wave infrared nonlinear crystals
部分中长波红外非线性晶体的物理特性

Table 1.
Physical properties of some mid/long-wave infrared nonlinear crystals
部分中长波红外非线性晶体的物理特性