[1] [1] NAKAGOMI S, MOMO T, TAKAHASHI S, et al. Deep ultraviolet photodiodes based on β-Ga2O3/SiC heterojunction［J］. Applied Physics Letters, 2013, 103(7): 072105.

[2] [2] KIM J, OH S, MASTRO M A, et al. Exfoliated β-Ga2O3 nano-belt field-effect transistors for air-stable high power and high temperature electronics［J］. Physical Chemistry Chemical Physics: PCCP, 2016, 18(23): 15760-15764.

[3] [3] GALAZKA Z, GANSCHOW S, FIEDLER A, et al. Doping of Czochralski-grown bulk β-Ga2O3 single crystals with Cr, Ce and Al［J］. Journal of Crystal Growth, 2018, 486: 82-90.

[4] [4] MU W X, JIA Z T, CITTADINO G, et al. Ti-doped β-Ga2O3: a promising material for ultrafast and tunable lasers［J］. Crystal Growth & Design, 2018, 18(5): 3037-3043.

[5] [5] LI P K, HAN X L, CHEN D Y, et al. Effect of air annealing on the structural, electrical, and optical properties of V-doped β-Ga2O3 single crystals［J］. Journal of Alloys and Compounds, 2022, 908: 164590.

[6] [6] SUZUKI T, SENTHIL MURUGAN G, OHISHI Y. Spectroscopic properties of a novel near-infrared tunable laser material Ni∶MgGa2O4［J］. Journal of Luminescence, 2005, 113(3/4): 265-270.

[9] [9] XIAO W Z, WANG L L, XU L, et al. Electronic structure and magnetic interactions in Ni-doped β-Ga2O3 from first-principles calculations［J］. Scripta Materialia, 2009, 61(5): 477-480.

[10] [10] GALAZKA Z, IRMSCHER K, SCHEWSKI R, et al. Czochralski-grown bulk β-Ga2O3 single crystals doped with mono-, di-, tri-, and tetravalent ions［J］. Journal of Crystal Growth, 2020, 529: 125297.

[12] [12] FU B, JIAN G Z, MU W X, et al. Crystal growth and design of Sn-doped β-Ga2O3: morphology, defect and property studies of cylindrical crystal by EFG［J］. Journal of Alloys and Compounds, 2022, 896: 162830.

[13] [13] GALAZKA Z, IRMSCHER K, UECKER R, et al. On the bulk β-Ga2O3 single crystals grown by the Czochralski method［J］. Journal of Crystal Growth, 2014, 404: 184-191.