Preparation and application of a high-performance vanadium oxide thermosensitive film

Condition	Valence of vanadium	Peak area of vanadium/P	Percentage of total	TCR
T1	V⁵⁺	134749.37	59.24%	2.27%
	V⁴⁺	75060.59	32.99%
	V³⁺	17687.09	7.77%
T2	V⁵⁺	151143.03	66.07%	2.69%
	V⁴⁺	35430.81	15.48%
	V³⁺	42235.11	18.45%

Table 2. [in Chinese]
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Table 2. [in Chinese]
Sample T1 Ra/nm T2 Ra/nm T1 Rq/nm T2 Rq/nm
C 0.825 0.083 1.05 0.106
T 0.823 0.079 1.06 0.101
B 0.817 0.080 1.05 0.104
L 0.795 0.084 1.03 0.111
R 0.818 0.082 1.06 0.107
Mean 0.816 0.082 1.05 0.106

Table 3. [in Chinese]
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Table 3. [in Chinese]
Resistance change after high temperature Sample one Sample two Sample three
T1 sample −6.4% −5.1% −7.5%
T2 sample −0.6% −0.1% −0.2%

Table 4. [in Chinese]
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Table 4. [in Chinese]
VOx deposition conditions Noise/mV Response rate/mV·K⁻¹ NETD/mK Sample size
T1 0.632 16.6 38 200
T2 0.456 17.2 26.5 50
Performance change of T2 relative to T1 −27.8% 3.6% −30.3%

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Zhanfeng Ma, Ying Wang, Chao Wang, Fan Ye, Jianfei Gao, Li Huang. Preparation and application of a high-performance vanadium oxide thermosensitive film[J]. Infrared and Laser Engineering, 2021, 50(2): 20200349

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