Acta Optica Sinica, Volume. 42, Issue 13, 1331002(2022)

Effect of Ultrathin Silicon Oxide and Titanium Nitride Composite Layer on Photogenerated Electron Export

Zixuan Lan, Yilin Wang, Lei Zhao, and Zhongquan Ma*
Author Affiliations
  • SHU-SOEN's R&D Laboratory, Department of Physics, Shanghai University, Shanghai 200444, China
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    Figures & Tables(5)
    Schematic diagram of SQIS solar cell with a-SiOx/TiN rear passivating contact
    Output parameters of SQIS device with or without a-SiOx/TiN. (a) Jsc; (b) Voc; (c) FF; (d) efficiency
    J-V characteristic curves and photovoltaic parameters of SQIS solar cells
    Profiles of minority-carrier lifetime of n-type c-Si wafer and TiN/a-SiOx/n-Si/a-SiOx/TiN sample. (a) n-Si; (b) TiN/a-SiOx/n-Si/a-SiOx/TiN
    Energy band diagram of a-SiOx(In)/n-Si/a-SiOx/TiN set up by AFORS-HET
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    Zixuan Lan, Yilin Wang, Lei Zhao, Zhongquan Ma. Effect of Ultrathin Silicon Oxide and Titanium Nitride Composite Layer on Photogenerated Electron Export[J]. Acta Optica Sinica, 2022, 42(13): 1331002

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    Paper Information

    Category: Thin Films

    Received: Nov. 30, 2021

    Accepted: Jan. 19, 2022

    Published Online: Jul. 15, 2022

    The Author Email: Ma Zhongquan (zqma@shu.edu.cn)

    DOI:10.3788/AOS202242.1331002

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